Daisuke Tsuji

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 1:00 PM - 3:00 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

1:15 PM - 1:30 PM

△ [22p-W541-2] Fabrication of InSb-HEMT with f_T of over 300 GHz using evaporated SiO_x film

〇(M2)Daisuke Tsuji¹, Kyousuke Isono¹, Tatsuya Taketsuru¹, Sachie Fujikawa¹, Issei Watanabe², Yoshimi Yamashita², Akira Endoh², Shinsuke Hara², Akifumi Kasamatsu², Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)