Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-H112-1~10] 15.5 Group IV crystals and alloys

Sun. Mar 20, 2016 9:00 AM - 11:30 AM H112 (H)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous Si_xGe_1-x films on SiO₂ substrate

〇Kinta Kusano¹, Kazuki Kudo¹, Takuya Sakai¹, Shinichi Motoyama², Yutaka Kusuda², Masahiro Furuta², Nobuyuki Naka³, Tomoko Numata³, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT, Kumamoto college, 2.Samco, 3.Horiba)

9:15 AM - 9:30 AM

[20a-H112-2] Ag-induced crystallization of amorphous Ge thin films on glass substrates

〇Ryota Yoshimine¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

9:30 AM - 9:45 AM

[20a-H112-3] Formation of High Mobility GSOI by Low Temperature Solid-Phase Crystallization

〇Yuki Kai¹, Ryo Matsumura^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS Research Fellow)

9:45 AM - 10:00 AM

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate
-Sn doping into Ge by lateral crystallization-

〇Takatsugu Sakai¹, Ryo Matsumura^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS Research Fellow)

10:00 AM - 10:15 AM

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

〇Kenta Moto¹, Ryo Matsumura^1,2, Taizo Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.ISEE, Kyushu Univ., 2.JSPS Research Fellow)

10:15 AM - 10:30 AM

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

〇(B)Kaito Takeshima¹, Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

10:30 AM - 10:45 AM

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

〇(D)Yuhki Itoh¹, Kaito Takeshima², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (1.Grad. Sch. Eng., Tohoku Univ., 2.Tohoku Univ.)

10:45 AM - 11:00 AM

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

〇Kosuke Yasuta¹, Yuhki Satoh², Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-H112-9] Evaluation of Stress in Thin Strained-Si:C on a Si substrate by Oil-immersion Raman Spectroscopy

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Seiya Ishihara¹, Atsushi Ogura¹ (1.Meiji Univ.)

11:15 AM - 11:30 AM

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing the defect control by ion implantation

〇You Arisawa¹, Kentarou Sawano², Noritaka Usami¹ (1.Nagoya Univ., 2.Tokyo City Univ.)

Session information

[20a-H112-1~10] 15.5 Group IV crystals and alloys

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous Si_xGe_1-x films on SiO₂ substrate

[20a-H112-2] Ag-induced crystallization of amorphous Ge thin films on glass substrates

[20a-H112-3] Formation of High Mobility GSOI by Low Temperature Solid-Phase Crystallization

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate
-Sn doping into Ge by lateral crystallization-

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

[20a-H112-9] Evaluation of Stress in Thin Strained-Si:C on a Si substrate by Oil-immersion Raman Spectroscopy

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing the defect control by ion implantation

Authentication

Session information

[20a-H112-1~10] 15.5 Group IV crystals and alloys

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous SixGe1-x films on SiO2 substrate

[20a-H112-2] Ag-induced crystallization of amorphous Ge thin films on glass substrates

[20a-H112-3] Formation of High Mobility GSOI by Low Temperature Solid-Phase Crystallization

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate-Sn doping into Ge by lateral crystallization-

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing- Cooling Rate Dependence of Supersaturated Sn Concentration -

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

[20a-H112-9] Evaluation of Stress in Thin Strained-Si:C on a Si substrate by Oil-immersion Raman Spectroscopy

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures utilizing the defect control by ion implantation

Authentication

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous Si_xGe_1-x films on SiO₂ substrate

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate
-Sn doping into Ge by lateral crystallization-

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing the defect control by ion implantation