The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-H121-1~10] 15.4 III-V-group nitride crystals

Sat. Mar 19, 2016 8:45 AM - 11:45 AM H121 (H)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

9:30 AM - 9:45 AM

[19a-H121-4] Period of stripe-mask dependence on facet-structure of selective area growth of
GaN by Hydride Vapor Phase Epitaxy

〇Shin Goubara1, Kota Yukizane1, Tohoru Matsubara1, Norihiro Itagaki1, Narihito Okada1, Keisuke Yamane2, Kazuyuki Tadatomo1 (1.Yamaguchi Univ., 2.Toyohashi Univ. of Technologhy)

Keywords:GaN,HVPE