[19a-P1-1~17] 7 Beam Technology and Nanofabrication（Poster）

[19a-P1-2] A Computational Study of Organic Resist Shrinkage during SEM Observation

〇Masanori Koyama¹, Yuki Furukawa¹, Hiroaki Kawata¹, Yoshihiko Hirai¹, Masaaki Yasuda¹ (1.Osaka Pref. Univ.)

Keywords:resist pattern shrinkage,scanning electron microscope,electron irradiation damage

The resist pattern shrinkage is a serious problem in scanning electron microscope (SEM) observation. The resist pattern shrinkage by electron irradiation is studied with both molecular dynamics (MD) simulation and Monte Carlo simulation of electron scattering. First, the shrinkage of the small resist pattern is studied with the MD simulation. Because the size of the resist structure in the MD simulation is much smaller than the actual pattern due to the computational time, we use Monte Carlo simulation of electron scattering together with the MD simulation to analyze the shrinkage of the larger resist pattern. The absorbed energy distribution in the resist is calculated with the Monte Carlo simulation of electron scattering. Then, the pattern is divided into smaller cell whose size is same as that of MD simulation. If the emission of the decomposition gas is assumed to be proportional to the absorbed energy, the shrinkage ratio of each cell is obtained from the MD simulation result. A total pattern size after electron irradiation was obtained by summing each shrunken cell in the resist.