The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-H121-1~16] 15.4 III-V-group nitride crystals

Sat. Mar 19, 2016 1:15 PM - 6:00 PM H121 (H)

Munetaka Arita(Univ. of Tokyo), Jitsuo Ohta(Univ. of Tokyo), Kazunobu Kojima(Tohoku Univ.)

4:45 PM - 5:00 PM

[19p-H121-12] Fabrication of InGaN/GaN single quantum disk nano LED fabricated by hydrogen environment anisotropic thermal etching (HEATE) technique

〇Kohei Ogawa1, Ryo Hachiya1, Tomoya Mizutani1, Shun Ishijima1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Nanotech cntr)

Keywords:nitride semiconductor,nano structure,etching