[19p-P12-1~27] 21.1 Joint Session K

[19p-P12-17] The effect of ambient atmosphere in the annealing on transistors characteristics in aluminum doped zinc oxide thin-film transistors using a solution method

〇Shota Sasaki¹, Fumiya Kimura¹, Yi Sun¹, Masatoshi Koyama¹, Toshihiko Maemoto¹ (1.Osaka Inst. of Tech. NMRC)

Keywords:Oxide semiconductor,Thin film transistor,Solution method