[19p-P4-1~17] 13.5 Semiconductor devices and related technologies

△ [19p-P4-7] Study of Fabrication Processes for Si-MOS Quantum Dot Devices with Multi-Layered Al Gates Structure

〇TAKUMU HONDA¹, Jun Yoneda², Kenta Takeda², Takamasa Kawanago¹, Tetsuo Kodera^4,5, Seigo Tarucha^2,3,5, Shunri Oda¹ (1.QNERC-Tokyo Tech., 2.RIKEN, 3.The Univ. of Tokyo, 4.Tokyo Tech., 5.NanoQuine-The Univ. of Tokyo)

Keywords:Quantum Dot