[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[20a-H101-7] Evaluation of crystalline dislocations of 4H-SiC single crystal substrate by observation of birefringence image

〇Kensuke Takenaka², Tomohisa Kato¹, Tatsuya Matsunaga¹, Manabu Takei², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Fuji Electric Co., Ltd.)

Keywords:SiC,birefringence,polarization microscope

Dislocations in 4H-SiC substrate could be a cause of device killer defect. We report the new method to observe the dislocations by using a transmission polarizing microscope with a controlled diffuseness of the light source.