[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-2] Comments on the Voronkov model: Stages 1 & 2

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R., Tohoku Univ.)

Keywords:Voronkov model,Frenkel pair,Schottky defect

The Voronkov model on grown-in defects in silicon crystal is developed based on the assumption that the thermal equilibrium point defects are the Frenkel pairs. As shown in the previous presentation, they are not Frenkel pairs but Schottky defects. We modify the stages 1 & 2 of the Voronkov model based on the Schottky defects.