[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-3] Comments on the Voronkov model (2): Effects of impurities

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

Keywords:Voronkov model,impurity effect,growth velocity

Vorokov and Falster discuss the effects of impurities on the grown-in defects in silicon under the assumption that the concentration of vacancy depends on the dopant concentration. According to our quenching experiments, however, the vacancy formation energy strongly depends othe species of dopants. We discuss the effect of dopant on the crystal growth velocity based on stage 1 shown in the previous presentation.