The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Mar 20, 2016 9:30 AM - 12:45 PM H113 (H)

Kentaro Kutsukake(Tohoku Univ.), Yuta Nagai(GlobalWafers Japan)

10:30 AM - 10:45 AM

[20a-H113-5] Effect of interstitial oxygen on point defect concentration in growing single crystal Si (2)

〇Kouji Sueoka1, Kozo Nakamura1, Jan Vanhellemont2 (1.Okayama Pref. Univ., 2.Ghent Univ.)

Keywords:Single Crystal Si,Intrinsic Point Defects,Interstitial Oxygen