[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-8] Infrared absorption measurement of low concentration carbon in Si crystal
(Ⅷ) Measurement by 2nd generation technique of 10¹⁴ cm⁻³ with SIMS and CPAA

〇Kaori Watanabe¹, Naohisa Inoue^2,9, Yasunori Goto³, Takahide Sugiyama⁴, Hirofumi Seki⁵, Masumi Obuchi⁶, Hiroyuki Uno⁷, Noriyuki Fujiyama⁵, Shigeru Shimada⁸, Yuichi Kawamura⁹ (1.Systems Engineering, 2.Tokyuo U. Agri&Tech., 3.Toyota Motor Co., 4.Toyota C. L., 5.Toray Res., 6.Nanoscience, 7.S.H.I Exam., 8.Bruker, 9.Osaka P. U.)

Keywords:silicon wafer,Infrared,carbon concentration

Low-concentration carbon in Si crystal is measured. Both CZ and FZ reference samples were prepared with concentration between 10¹⁴ and 10¹⁵cm^-3. They were calibrated by SIMS and CPAA. Round-robin measurement was successfully done by the standard measurement procedure and analysis such as phonon-peak fitting down to about 10¹⁴cm^-3 concentration in the JSNM standardization activity.