[20a-S221-1~12] 13.3 絶縁膜技術

▲ [20a-S221-5] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics (II)

〇(D)Ahmed SheikhRashel Al¹、Uehara Fumiya²、Kobayashi Kyoteru^1,2 (1.GRAD SCH S&T, Tokai Univ、2.GRAD SCH Eng, Tokai Univ)

キーワード：Silicon carbonitride (SiCN),Nonvolatile semiconductor memory,Charge retention

We investigated the charge retention characteristics of the charge-trapping type memory capacitors with blocking oxide-SiCN-tunneling oxide stacked films at four different temperatures. The retention life time in the SiCN memory capacitors was estimated to be larger than 10 years at 85 °C. We presented a simple method to analyze the energy distribution of electron trap states numerically. Using the proposed method, electrons trapped in the SiCN film were extracted to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep traps suggests that the SiCN dielectric films with a low-dielectric constant can be employed as the charge trapping layer of nonvolatile memories.