[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-4] Reliable and Compact PUF Circuitry Using Poly-Crystalline-Si Channel FinFET Co-Integrated with Crystalline-Si Channel FinFET and Its Evaluation Method

〇Shinichi Ouchi¹, Yongxun Liu¹, Yohei Hori¹, Toshifumi Irisawa¹, Hiroshi Fuketa¹, Yukinori Morita¹, Shinji Migita¹, Takahiro Mori¹, Tadashi Nakagawa¹, Junichi Tsukada¹, Hanpei Koike¹, Meishoku Masahara¹, Takashi Matsukawa¹ (1.AIST)

Keywords:SRAM PUF,poly-crystalline-Si-channel FinFET,Noise Margin

We propose an SRAM-PUF circuit using a poly-crystalline-Si-channel FinFET which is integrated together with logic circuits by an identical process. The poly-Si device has wide variation and stabilizes the operation of PUF which is strongly affected by external noise. By fabrication and analysis with newly defined SRAM-PUF noise margin, it was found that the proposed SRAM PUF stably operated with an intra-PUF hamming distance improved to 1/3.4 of that of the conventional one.