14:30 〜 14:45
▲ [20p-H103-6] Energy Dissipation in Single Crystal Diamond Mechanical Resonators
キーワード：MEMS
E-mail: meiyong.liao@nims.go.jp
Diamond is attractive for micro- or nano-electromechanical system (MEMS/NEMS) due to its superior properties, such as high mechanical strength, low coefficient of thermal expansion, tunable electrical conductivity, and the highest thermal conductivity among semiconductors. Steady-state progress has been made in the fabrication of various diamond MEMS/NEMS structures by using polycrystalline, nanocrystalline or ultrananocrystalline diamond. Recently, single crystal diamond (SCD) MEMS/NEMS has aroused growing interest due to the “true” diamond properties for extremely high performance. By using ion-implantation assisted lift-off technique (IAL), we developed the batch fabrication of nanoscale SCD resonators and NEMS switches in a controlled manner.1 In order to develop high-Q factor SCD resonators by this facile IAL method, it is essential to investigate the energy dissipation in such SCD resonators. In this work, we examine the energy dissipation mechanisms limiting the Q factors in the SCD resonators fabricated by the IALT method. For this purpose, we fabricate SCD cantilevers with various dimensions in length, width, and thickness. The dependence of the Q factors on the cantilevers dimensions is examined.
Diamond is attractive for micro- or nano-electromechanical system (MEMS/NEMS) due to its superior properties, such as high mechanical strength, low coefficient of thermal expansion, tunable electrical conductivity, and the highest thermal conductivity among semiconductors. Steady-state progress has been made in the fabrication of various diamond MEMS/NEMS structures by using polycrystalline, nanocrystalline or ultrananocrystalline diamond. Recently, single crystal diamond (SCD) MEMS/NEMS has aroused growing interest due to the “true” diamond properties for extremely high performance. By using ion-implantation assisted lift-off technique (IAL), we developed the batch fabrication of nanoscale SCD resonators and NEMS switches in a controlled manner.1 In order to develop high-Q factor SCD resonators by this facile IAL method, it is essential to investigate the energy dissipation in such SCD resonators. In this work, we examine the energy dissipation mechanisms limiting the Q factors in the SCD resonators fabricated by the IALT method. For this purpose, we fabricate SCD cantilevers with various dimensions in length, width, and thickness. The dependence of the Q factors on the cantilevers dimensions is examined.