[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
- Gettering Ability of Metal Impurity Contaminated Device Fabrication Process -

〇Kazunari Kurita¹, Ryosuke Okuyama¹, Ayumi Masada¹, Takeshi Kadono¹, Ryo Hirose¹, Yoshiaki Koga¹, Hidehiko Okuda¹ (1.SUMCO CORPORATION)

Keywords:silicon wafer,carbon cluster ion implantation,proximity gettering

We investigated that the metallic impurities gettering capability of carbon-cluster ion implanted silicon wafers by using p-n junction diode structure under semiconductor manufacturing process line. We demonstrate that the metallic impurities getter carbon-cluster ion implanted projection range after p-n junction fabrication process for the first time.
These results indicate that the carbon-cluster ion implanted silicon wafers are able to control metallic impurities contamination during device fabrication process.
Therefore, we assume that carbon-cluster ion implanted silicon wafers makes it possible to accomplished high gettering capability during device manufacturing process.