Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Mar 20, 2016 2:15 PM - 5:45 PM H113 (H)

Koji Sueoka(Okayama Pref. Univ.), Yoshifumi Yamashita(Okayama Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:15 PM - 2:30 PM

[20p-H113-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
- Gettering Ability of Metal Impurity Contaminated Device Fabrication Process -

〇Kazunari Kurita¹, Ryosuke Okuyama¹, Ayumi Masada¹, Takeshi Kadono¹, Ryo Hirose¹, Yoshiaki Koga¹, Hidehiko Okuda¹ (1.SUMCO CORPORATION)

2:30 PM - 2:45 PM

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

〇Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO Corp.)

2:45 PM - 3:00 PM

[20p-H113-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Trapping Effect of Oxygen -

〇HIDEHIKO OKUDA¹, RYOU HIROSE¹, AYUMI MASADA¹, TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

3:00 PM - 3:15 PM

[20p-H113-4] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:15 PM - 3:30 PM

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

〇TAKESHI KADONO¹, RYOSUKE OKUYAMA¹, AYUMI MASADA¹, RYOU HIROSE¹, YOSHIHIRO KOGA¹, HIDEHIKO OKUDA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

3:30 PM - 3:45 PM

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO Corp., 2.NISSIN ION EQUIPMENT Corp.)

4:00 PM - 4:15 PM

[20p-H113-7] Critical Stress for Generation of Slip Dislocation Developing from Scratches in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO CORPORATION)

4:15 PM - 4:30 PM

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

〇Wataru Fukushima¹, Bing Gao², Hirofumi Harada², Yshiji Miyamura², Satoshi Nakano², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

4:30 PM - 4:45 PM

[20p-H113-9] TEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

4:45 PM - 5:00 PM

[20p-H113-10] Evaluation of SiC crystal with laser annealing (3)

〇Hidekazu Yamamoto¹, Mizuki Uchimori¹, Fulvio Mazzamuto², Jongduk Kim³, Shuichi Ono⁴, Manabu Arai⁴ (1.Chiba Inst., 2.SCREEN/LASSE, 3.Park Systems, 4.New Japan Radio)

5:00 PM - 5:15 PM

[20p-H113-11] Quantitative analysis of crystal distortion in SiC wafer using scanning X-ray topography

〇Akio Yoneyama¹, Natsuki Yokoyama¹, Renichi Yamada¹ (1.Hitachi)

5:15 PM - 5:30 PM

[20p-H113-12] Inelastic x-ray scattering measurements of phonon dispersion and lifetimes in ScN epitaxial film

〇Hiroshi Uchiyama¹, Yuichi Oshima², Garcia Villora², Kiyoshi Shimamura² (1.JASRI/SPring8, 2.NIMS)

5:30 PM - 5:45 PM

▲ [20p-H113-13] X-Ray Determination of the Structure of Ice Confined in Carbon Nanotubes

〇(PC)Gregory A Pilgrim^1,2, Todd D Krauss¹ (1.Univ. of Rochester, 2.JSPS International Research Fellow)

Session information

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
- Gettering Ability of Metal Impurity Contaminated Device Fabrication Process -

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

[20p-H113-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Trapping Effect of Oxygen -

[20p-H113-4] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature-

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -

[20p-H113-7] Critical Stress for Generation of Slip Dislocation Developing from Scratches in Si Wafers

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

[20p-H113-9] TEM evaluation of atomic arrangements on dislocation core in GaN layer

[20p-H113-10] Evaluation of SiC crystal with laser annealing (3)

[20p-H113-11] Quantitative analysis of crystal distortion in SiC wafer using scanning X-ray topography

[20p-H113-12] Inelastic x-ray scattering measurements of phonon dispersion and lifetimes in ScN epitaxial film

▲ [20p-H113-13] X-Ray Determination of the Structure of Ice Confined in Carbon Nanotubes

Authentication

Session information

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)-Trapping Capability of projected range for Hydrogen-

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)- Development study of multi-element molecular ion implantation technique -

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

▲ [20p-H113-13] X-Ray Determination of the Structure of Ice Confined in Carbon Nanotubes

Authentication

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -