The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Mar 20, 2016 2:15 PM - 5:45 PM H113 (H)

Koji Sueoka(Okayama Pref. Univ.), Yoshifumi Yamashita(Okayama Univ.)

5:00 PM - 5:15 PM

[20p-H113-11] Quantitative analysis of crystal distortion in SiC wafer using scanning X-ray topography

〇Akio Yoneyama1, Natsuki Yokoyama1, Renichi Yamada1 (1.Hitachi)

Keywords:Topography

Scanning X-ray topography was developed for quantitative analysis of crystal distortions in SiC wafer. By calculating the spatial distribution of the deviation from the Bragg angle with diffraction images obtained by rotating wafer, the method enables to perform the precise mapping of distortions. The obtained topographic image depicts many crystal distortions in a SiC wafer within 0.1 arcsec accuracy.