[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Trapping Effect of Oxygen -

〇HIDEHIKO OKUDA¹, RYOU HIROSE¹, AYUMI MASADA¹, TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

Keywords:silicon wafer,carbon-cluster ion implantation,oxygen diffusion

We reported that carbon-cluster ion implanted silicon wafers can be controlled oxygen out-diffusion to epitaxial layer from silicon wafer substrate because carbon cluster ion implantation projected range increases in the amount of oxygen trapped with increasing the carbon dose amount in a carbon-cluster ion implanted projection range at Spring Japan Society of Applied Physics in 2015.
It is possible to trap the oxygen diffused from a silicon wafer substrate at a carbon-cluster ion implanted projection range 100% for even 900℃ of diffused temperature, 50% with 1000℃.
In this study, it will be reported that the diffusion behavior of the oxygen compared diffusion temperature more than 1000℃ with that of less than 1000℃.