[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-4] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:epitaxial silicon wafer,room templature bonding,oxygen diffusion

Oxygen diffuse from silicon wafer substrate to epitaxial layer during fabricating CMOS image sensor. This diffused oxygen form the defect in device active region. Thus, this defect influence device characteristic that is such as image lag. Therefore, it is strongly require for the wafer of this device to control oxygen out-diffused from silicon substrate to epitaxial layer.
This out-diffused oxygen is trapped in carbon-cluster ion implanted projection range during fabricating CMOS image sensor. Thus, this implanted technique is effect of the trap out-diffused oxygen from silicon wafer substrate during fabricating CMOS image sensor.
In this study, we demonstrate that it is effective for controlling oxygen’s out-diffusion from silicon wafer substrate to bond epitaxial layer on silicon wafer substrate at room temperature.