[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-9] TEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

Keywords:gallium nitride,threading dislocation

To optimize epitaxial layer growth of GaN on sapphire, a method of depositing a GaN buffer layer at low temperature (LT-GaN) has been developed. We reported generation of the dislocation at stacking faults in LT-GaN, and atomic arrangements in the dislocation slip relative to the surrounding GaN. However, the relationship between the dislocation and the slip has not been clarified yet. In this study, we investigated atomic displacement in a dislocation core in GaN layer using scanning transmission electron microscopy.