Stress Variation in GaN layers grown on Si substrate by manufacturing process of LEDs

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

6:15 PM - 6:30 PM

〇Aoi Okada¹, Kenjiro Uesugi¹, Shigeya Kimura¹, Tatsunori Sakano¹, Hisashi Yoshida¹, Shinya Nunoue¹ (1.Toshiba Corp.)

Keywords:GaN,LED,Stress