[20p-H137-1~15] 7.5 イオンビーム一般

▲ [20p-H137-4] Effect of Hydrogen Ion Beam Treatment on Si Nanocrystal/SiO₂ Superlattice Memory Devices

〇(DC)Fu Shengwen¹、Chen HuiJu¹、Shih ChuanFeng¹ (1.Cheng Kung Univ.)

キーワード：Silicon Nanocrystal,Superlattice,Hydrogen Ion Beam

This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO₂ superlattice-based memory devices with an improved memory window and retention properties. The SiO₂ and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. An increase in the memory window and a reduction in the leakage current of samples through HIBAS were achieved because of the increase in the O/Si ratio. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.