The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

1:30 PM - 3:30 PM

[20p-P9-11] Fabrication of GaN Porous Structures Using Photo-Electrochemical Etching and Electrode Response

Xiaoyi Zhang1, Keisuke Ito1, Hirofumi Kida1, Yusuke Kumazaki1, Taketomo Sato1 (1.RCIQE,Hokkaido Univ.)

Keywords:Porous Structures,Photo-Electrochemical Etching

High-density nanostructures of GaN have been widely investigated for highly-electrochemical responses in chemical sensors, photoelectrodes and so on. Porous structure is one of the attractive nanostructures with the merit of high productivity over a large area and low damages during etching. In this study, the fabrication of porous structures by the electrochemical etching is reported and the electrochemical response of porous electrodes is measured as well.