[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

[20p-P9-8] Characterization of traps induced by hydrogen implantation in n-GaN

〇(M1)Shougo Ueda¹, Masahiro Goto¹, Kota Takabayashi¹, Yutaka Tokuda¹, Kenji Shiojima², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tecnol., 2.Fukui University, 3.S. H. I. Examination & Inspection, Ltd.)

Keywords:hydrogen implantation,GaN

We have characterized traps induced in n-GaN by hydrogen implantation with DLTS and MCTS measurements. The sample used was Si-doped (8.0x10¹⁶ cm^-3) n-GaN grown by MOCVD on n⁺-GaN substrate. Hydrogen implantation was adjusted to implant hydrogen in the observation region of DLTS and MCTS with dose of 1.0x10¹⁰ and 1.0x10¹¹ cm^-3. DLTS revealed the introduction of electron trap E0 (0.13eV) by hydrogen implantation, which might be ascribed to the nitrogen vacancy. The E0 trap concentration increased linearly with dose from 3.0x10¹⁵ to 1.2x10¹⁶ cm^-3. On the contrarily, pre-existing hole trap H1 (0.86eV), which might be Ga-vacancy- or carbon-related, shows no significant change in concentration around 2.4~2.9x10¹⁵ cm^-3.