[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

[20p-P9-9] Behavior of plasma-induced defects in n- and p-GaN

Yusuke Koga¹, Ryohei Inoue¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

Keywords:plasma-induced defects