Improving electrical characteristics of sputtered MoS<sub>2</sub> film by post-annealing in forming gas atmosphere

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Sun. Mar 20, 2016 1:45 PM - 6:30 PM S422 (S4)

Keiji Ikeda(TOSHIBA), Jiro Ida(Kanazawa Inst. of Tech.)

1:45 PM - 2:00 PM

〇Junichi Shimizu¹, Takumi Ohashi¹, Kentaro Matsuura¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:MoS2,2D material,Sputtering