[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-11] Fabrication and Evaluation of Ge Tunnel FET with Metal/Ge and n⁺/Ge Contact

〇Keisuke Yamamoto¹, Hayato Okamoto², Dong Wang², Hiroshi Nakashima¹ (1.KASTEC, Kyushu Univ., 2.IGSES, Kyushu Univ.)

Keywords:Germanium,tunnel FET,Schottky junction

Tunnel FET(TFET), which can be achieve steep-slope on/off transition, has been attracted attention for reduction of power consumption for future LSI devices. It is important to form steep tunnel junction in source/channel region for high performance TFET. In addition, for practical use, it is preferable that TFET should be formed using material and structure which have good affinity with conventional Si process. We focus metal/Ge contact as a candidate of source/channel structure for TFET, and aim for Ge TFET with metal source/drain. In this study, we will report operation and detail characteristics of planer TFET fabricated on a bulk Ge substrate.