(100) Oriented Crystallization of Silicon Film by CW Laser Annealing on Amorphous Substrate

Yoshiaki Nieda; Nobuo Sasaki; Daisuke Hishitani; Masahiro Horita; Yasuaki Ishikawa; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sun. Mar 20, 2016 1:45 PM - 6:45 PM S423 (S4)

Seiichiro Higashi(Hiroshima Univ.), Akito Hara(Tohoku Gakuin Univ.)

3:00 PM - 3:15 PM

[20p-S423-6] (100) Oriented Crystallization of Silicon Film by CW Laser Annealing on Amorphous Substrate

〇(M2)Yoshiaki Nieda¹, Nobuo Sasaki², Daisuke Hishitani¹, Masahiro Horita³, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech., 2.Japan Women's Univ., 3.Kyoto Univ.)

Keywords:Silicon,CLC,LTPS

More than 99.5% (100) normal texture of LTPS films is obtained by unseeded CLC of a-Si. This is realized in the lower power range within lateral growth conditions by a single laser scanning with a top-flat line-beam having high power-density uniformity (standard deviation of 1.3%).