[20p-S611-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-S611-2] Distribution of dislocation density in Si ingots grown by noncontact crucible method

〇Ryota Murai¹, Kazuo Nakajima¹, Satoshi Ono¹, Yuzuru Kaneko¹ (1.JST)

Keywords:solar cell,silicon,dislocation

We proposed a new Si crystal growth technique, Noncontact crucible (NOC) method, and investigated the distribution of dislocations in the ingot. As a result, we found that ring-like high dislocation density region was appeared, and the dislocation densities decreased as the ingot grew. The high dislocation density region moved to edge side of the ingot as ingot grew. From these results, we think that the dislocations went out from the ingot as crystal growth, because the shape of growing interface is convex. NOC method is effective technique to reduce dislocation density in Si ingots without necking technique.