[20p-S621-1~13] 3.15 Silicon photonics

[20p-S621-6] High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)

〇Sho Nagatomo¹, Shinya Kikuta², Satohiko Hoshino², Yasuhiko Ishikawa¹ (1.Univ.Tokyo, 2.Tokyo Electron Ltd.)

Keywords:Germanium Photodetectors,Dark current,Laser anneal

A laser annealing process is introduced into the fabrication of Near-Infrared Ge photodetecors. The laser annealing achieved Ge detectors on Si with low dark current and high responsivity due to selective absorption of NIR light into Ge and ultra-short duration, which prevent inter-diffusion of Si&Ge. In this presentation, the effects of the laser annealing for p-i-n structure of Ge on Si are demonstrated.