[20p-S621-1~13] 3.15 Silicon photonics

[20p-S621-8] High Speed Operation of Butt-Joint Waveguide-type Ge-PD with Lateral PIN Configuration

〇Takasi Simoyama¹, Shigekazu Okumura¹, Hideki Ono¹, Masahiko Imai¹, Yu Tanaka¹, Ken Morito¹ (1.PETRA)

Keywords:Si Photonics,Ge photo diode,optical interconnect

We report a high speed operation of a butt-joint (BJ) waveguide-type Ge-PD with lateral PIN configuration. The BJ waveguide PD shows very good characteristics such as the low dark current of 20 nA at -3V bias, the high responsivity of 0.88 A/W at 1550 nm wavelength with -3V bias condition, and the wide 3dB bandwidth of 22 GHz. We also demonstrate open eye diagrams at 25 Gbps.