Oral presentation

[20a-S621-1~8] 3.15 Silicon photonics

Sun. Mar 20, 2016 10:00 AM - 12:15 PM S621 (S6)

Makoto Okano(AIST), Yuya Shoji(Titech)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

△ [20a-S621-1] Evaluation of surface plasmon excitation at the interface of ferromagnetic metal and dielectric thin films with Otto configuration

〇Yoshiki Yago¹, Takeaki Ando¹, Mio Morita¹, Hiromasa Shimizu¹ (1.Tokyo Univ. of Agri. & Tech)

10:15 AM - 10:30 AM

[20a-S621-2] Fabrication of Bi₂Y₁Fe₅O₁₂ Films on Glass and Silicon Substrates by Metal Organic Decomposition Method and their Magneto-Optic Characterization

〇masashi hosoda¹, Jo Sato¹, Danish Abdul Wahid¹, Hiromasa Shimizu¹ (1.Tokyo Univ. of Agri. & Tech.)

10:30 AM - 10:45 AM

[20a-S621-3] Investigation of Thermal Independent Slot Waveguide

〇Yoshiteru Amemiya¹, Amrita Kumar Sana¹, Tomoya Taniguchi¹, Shuhei Yokoyama¹, Kazuki Noda¹, Takuma Sennichi¹, Shin Yokoyama¹ (1.HIroshima Univ.)

10:45 AM - 11:00 AM

[20a-S621-4] Design and Fabrication of Vertical Directional Si couplers

〇Yusuke Yamamoto¹, Kaihara Terunori¹, Shimizu Hiromasa¹ (1.Tokyo Univ. of Agri. & Tech.)

11:15 AM - 11:30 AM

[20a-S621-5] Analysis of the Wavelength-Selective Switch Structure of Mach-Zehnder Interferometer with Embedded Microring Resonators

〇Kengo Miura¹, Yuya Shoji¹, Tetsuya Mizumoto¹ (1.Tokyo Tech.)

11:30 AM - 11:45 AM

[20a-S621-6] Proposal and Measurement of interlayer trident type coupler for multi-layer optical circuits

〇(M1)Kazuto Itoh¹, Yuki Kuno¹, Yusuke Hayashi¹, Junichi Suzuki¹, Tomohiro Amemiya¹, Nobuhiko Nishiyama¹, Shigehisa Arai¹ (1.Tokyo Tech.)

11:45 AM - 12:00 PM

△ [20a-S621-7] High coupling efficiency Si-wire grating couplers by ArF-immersion lithography

〇Yohei Sobu¹, Seok-hwan Jeong¹, Yu Tanaka¹, Ken Morito¹ (1.PETRA)

12:00 PM - 12:15 PM

[20a-S621-8] A Multi-Wavelength Light Source on Silicon Substrate by Flip-chip Bonding

〇Nobuaki Hatori¹, Mitsuru Kurihara¹, Motoyuki Nishizawa¹, Yu Tanaka¹, Ken Morito¹, Kazuhiko Kurata¹ (1.PETRA)

Oral presentation

[20p-S621-1~13] 3.15 Silicon photonics

Sun. Mar 20, 2016 1:45 PM - 5:30 PM S621 (S6)

Katsuya Oda(Hitachi R&D Group), Nobuaki Hatori(PETRA), Junichi Fujikata(PETRA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

〇YuanHsuan Jhang¹, Reio Mochida², Katsuaki Tanabe^2,3, Keizo Takemasa⁴, Mitsuru Sugawara⁴, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, The Univ. Tokyo, 2.NanoQuine, The Univ. Tokyo, 3.Kyoto Univ., 4.QD Laser, Inc)

2:00 PM - 2:15 PM

△ [20p-S621-2] Polarization dependent optical propagation characteristics of germanium waveguides

〇Tadashi Okumura¹, Katsuya Oda¹, Junichi Kasai¹, Misuzu Sagawa¹, Yuji Suwa¹ (1.Hitachi R&D Group)

2:15 PM - 2:30 PM

[20p-S621-3] Enhanced photoluminescence from n⁺-Ge by post-growth annealing

〇(M1)Naoki Higashitarumizu¹, Kazumi Wada¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

2:30 PM - 2:45 PM

[20p-S621-4] Improving Crystallinity of Ge Waveguides by Epitaxial Lateral Overgrowth

〇Katsuya Oda¹, Tadashi Okumura¹, Jun-ichi Kasai¹, Satoshi Kako², Satoshi Iwamoto², Yasuhiko Arakawa² (1.Hitachi R&D Group, 2.Univ. of Tokyo)

2:45 PM - 3:00 PM

[20p-S621-5] Ultra-low threading dislocation density Ge film by lateral overgrowth on SiO₂

〇Motoki Yako¹, Kazumi Wada¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[20p-S621-6] High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)

〇Sho Nagatomo¹, Shinya Kikuta², Satohiko Hoshino², Yasuhiko Ishikawa¹ (1.Univ.Tokyo, 2.Tokyo Electron Ltd.)

3:30 PM - 3:45 PM

[20p-S621-7] Fabrication of Ge/SiGe Heterojunction Avalanche Photodiodes

〇Yuji Miyasaka¹, Tatsurou Hiraki², Kota Okazaki², Tai Tsuchizawa², Tsuyoshi Yamamoto², Kazumi Wada¹, Yasuhiko Ishikawa¹ (1.Univ. Tokyo, 2.NTT Device Technology Labs.)

3:45 PM - 4:00 PM

[20p-S621-8] High Speed Operation of Butt-Joint Waveguide-type Ge-PD with Lateral PIN Configuration

〇Takasi Simoyama¹, Shigekazu Okumura¹, Hideki Ono¹, Masahiko Imai¹, Yu Tanaka¹, Ken Morito¹ (1.PETRA)

4:00 PM - 4:15 PM

[20p-S621-9] Resonant electronic Raman transitions in tensile-strained Ge

〇(M2)Tomoaki Matsushita¹, Yuhsuke Yasutake^1,2, Satoshi Iba³, Hidekazu Saito³, Shinji Yuasa³, Susumu Fukatsu¹ (1.Univ. of Tokyo, 2.JST-PRESTO, 3.AIST)

4:30 PM - 4:45 PM

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

〇Guo-En Chang¹ (1.Nat. Chung Cheng Univ.)

4:45 PM - 5:00 PM

△ [20p-S621-11] Bandgap modulation in Ge wire due to uniaxial tensile strain induced by stress liner

〇Shogo Tanaka¹, Hiroshi Oka¹, Kohei Tominaga¹, Takashi Amamoto¹, Masahiro Koyama¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka univ.)

5:00 PM - 5:15 PM

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

Shao-Wei Chen¹, Chia-Ho Tsai¹, Mao-Cheng Weng¹, 〇Guo-En Chang¹ (1.Nat. Chung Cheng. Univ.)

5:15 PM - 5:30 PM

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates

Li-Chou Sun¹, 〇Guo-En Chang¹ (1.Nat. Chung Cheng. Univ.)

Oral presentation

[21p-S611-1~8] 3.15 Silicon photonics

Mon. Mar 21, 2016 1:30 PM - 3:30 PM S611 (S6)

Nobuhiko Nishiyama(Titech)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[21p-S611-1] Sawtooth p/n Junction in Si Photonic Crystal Modulator

〇Yosuke Terada¹, Tatebe Tomoki¹, Baba Toshihiko¹ (1.Yokohama Nat'l Univ.)

1:45 PM - 2:00 PM

[21p-S611-2] Optimization of Doping Concentration of p-n Junction in Si Photonic Crystal Modulator

〇(B)Tomoki Tatebe¹, Yosuke Terada¹, Toshihiko Baba¹ (1.Yokohama Nat'l Univ.)

2:00 PM - 2:15 PM

▲ [21p-S611-3] High-efficiency silicon optical modulator based on silicon-nitride-loaded SOI waveguide

〇Guangwei Cong¹, Yuriko Maegami¹, Morifumi Ohno¹, Makoto Okano¹, Koji Yamada¹ (1.AIST)

2:15 PM - 2:30 PM

[21p-S611-4] Investigation of carrier-depletion InGaAsP optical modulator on III-V CMOS photonics platform

〇Naoki Sekine¹, Jaehoon Han^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.U. Tokyo, 2.JST-CREST)

2:30 PM - 2:45 PM

[21p-S611-5] Investigation of Frequency Response over the Wide Spectral Range in Si Photonic Crystal Mach-Zehnder Modulator

〇Yosuke Hinakura¹, Yosuke Terada¹, Toshihiko Baba¹ (1.Yokohama Nat'l Univ.)

2:45 PM - 3:00 PM

[21p-S611-6] Zero-bias low-voltage operation of Si photonic crystal QPSK modulator

〇(M1)Keiko Hojo¹, Yosuke Terada¹, Yosuke Hinakura¹, Toshihiko Baba¹ (1.Yokohama Nat. Univ.)

3:00 PM - 3:15 PM

△ [21p-S611-7] Modulation bandwidth improvement of MOS optical modulators based on strained SiGe

〇(D)JAEHOON HAN^1,2,3, MITSURU TAKENAKA^1,2, SHINICHI TAKAGI^1,2 (1.The Univ. of Tokyo, 2.JST-CREST, 3.JSPS research fellow)

3:15 PM - 3:30 PM

[21p-S611-8] Study on Si Optical Modulator, Using Strained SiGe Layer with in-situ B doping

〇Junichi Fujikata¹, Masataka Noguchi¹, Jaehoon Han², Shigeki Takahashi¹, Takahiro Nakamura¹, Mitsuru Takenaka² (1.PETRA, 2.Univ. of Tokyo)

Poster presentation

[21p-P16-1~12] 3.15 Silicon photonics

Mon. Mar 21, 2016 4:00 PM - 6:00 PM P16 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[21p-P16-1] Loss reduction at slab-array interface in AWG using minimum rib area

〇Hideaki Okayama^1,2, Yosuke Onawa^1,2, Hiroki Yaegashi^1,2, Hironori Sasaki^1,2 (1.OKI, 2.PETRA)

4:00 PM - 6:00 PM

[21p-P16-2] Polarization Independence of Ring Resonator using Bending Directional Coupler

〇Yuto Yokoi¹, Raito Mitsuhashi¹, Yuichi Matsushima², Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ, 2.GCS Research Organization)

4:00 PM - 6:00 PM

[21p-P16-3] Design of high-dynamic range polarization splitter based on directional coupler

〇Daishi Nakase¹, Takeo Maruyama¹ (1.Kanazawa Univ.)

4:00 PM - 6:00 PM

▲ [21p-P16-4] Label Free Biosensor Based on Photonic Crystal Resonator

〇(DC)Amrita Kumar Sana¹, Yoshiteru Amemiya¹, Shin Yokoyama¹ (1.Hiroshima Univ.)

4:00 PM - 6:00 PM

▲ [21p-P16-5] Preparation and Characterization of Bi substituted gadolinium iron garnet (Bi_xGd_3-xFe₅O₁₂ films with x=1 to 2.5 by Enhanced Metal Organic Decomposition method

〇(D)AbdulWahid Danish¹, Jo Sato¹, Masashi Hosoda¹, Hiromasa Shimizu¹ (1.TUAT)

4:00 PM - 6:00 PM

[21p-P16-6] The fabrication of the graphene slot waveguide for optical modulator

〇Kazuya Sasaki^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

4:00 PM - 6:00 PM

[21p-P16-7] Study on Si MMI-Waveguide-Type 2×2 Optical Switch

〇Yuji Fujiwara¹, Yusuke Shimada¹, Atsushi Ishikawa¹, Atsushi Matsumoto², Yuichi Matsushima³, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT, 3.GCS)

4:00 PM - 6:00 PM

[21p-P16-8] Growth of InAs QDs on directry - bonded InP/Si substrate

〇(B)Naoki Kamada¹, Toshiki Sukigara¹, Tetsuo Nishiyama¹, Yuya Onuki¹, Keiichi Matsumoto¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 6:00 PM

[21p-P16-9] Study of Heterogeneous Bonding of InP Chip on Si Substrate with Polymer Intermediate Layer

〇Hideki Nagai¹, Bo Tian¹, Yuichi Matsushima², Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.Waseda GCS)

4:00 PM - 6:00 PM

[21p-P16-10] Bonding pressure dependence on shear force and PL intensity of crystal grown film on directly-bonded InP/Si substrate

〇(B)Yuya Onuki¹, Keiichi Matsumoto¹, Junya Kishikawa¹, Tetsuo Nishiyama¹, Naoki Kamada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 6:00 PM

[21p-P16-11] Enhanced Biaxial Tensile Strain in GOI by Using Circular Microbridge Structure

〇Shou Matsushita¹, Xuejun Xu¹, Kentarou Sawano¹, Takuya Maruizumi¹ (1.Tokyo City Univ.)

4:00 PM - 6:00 PM

[21p-P16-12] Influences of P delta-doping at Ge quantum dots / Si interface on photoluminescence properties and dot formation

〇Koki Watanabe¹, Xu Xuejun¹, Sawano Kentarou¹, Maruizumi Takuya¹ (1.Tokyo City Univ.)

Sessions

3 Optics and Photonics » 3.15 Silicon photonics

[20a-S621-1~8] 3.15 Silicon photonics

△ [20a-S621-1] Evaluation of surface plasmon excitation at the interface of ferromagnetic metal and dielectric thin films with Otto configuration

△ [20a-S621-7] High coupling efficiency Si-wire grating couplers by ArF-immersion lithography

[20p-S621-1~13] 3.15 Silicon photonics

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

△ [20p-S621-2] Polarization dependent optical propagation characteristics of germanium waveguides

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge1-xSnx/Ge quantum well on Ge-on-Si substrates

△ [20p-S621-11] Bandgap modulation in Ge wire due to uniaxial tensile strain induced by stress liner

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

▲ [20p-S621-13] Photoluminescence from Ge0.92Sn0.08/Ge multiple-quantum-well on silicon substrates

[21p-S611-1~8] 3.15 Silicon photonics

▲ [21p-S611-3] High-efficiency silicon optical modulator based on silicon-nitride-loaded SOI waveguide

△ [21p-S611-7] Modulation bandwidth improvement of MOS optical modulators based on strained SiGe

[21p-P16-1~12] 3.15 Silicon photonics

▲ [21p-P16-4] Label Free Biosensor Based on Photonic Crystal Resonator

▲ [21p-P16-5] Preparation and Characterization of Bi substituted gadolinium iron garnet (BixGd3-xFe5O12 films with x=1 to 2.5 by Enhanced Metal Organic Decomposition method

Authentication

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates

▲ [21p-P16-5] Preparation and Characterization of Bi substituted gadolinium iron garnet (Bi_xGd_3-xFe₅O₁₂ films with x=1 to 2.5 by Enhanced Metal Organic Decomposition method