[21p-P16-1~12] 3.15 Silicon photonics

[21p-P16-10] Bonding pressure dependence on shear force and PL intensity of crystal grown film on directly-bonded InP/Si substrate

〇(B)Yuya Onuki¹, Keiichi Matsumoto¹, Junya Kishikawa¹, Tetsuo Nishiyama¹, Naoki Kamada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:InP/Si substrate,MOVPE,Optical interconnection