[21a-P8-1~27] 16 Amorphous and Microcrystalline Materials（Poster）

[21a-P8-4] Fabrication of Overdose hydrogen to a-Si:H Film by “Ion Beam Assist Method”

〇(M2)Kazuki Miyama¹, Souitiro Otsu², Takahiro Ono², Hirishi Kubota¹, Takeshi Hashishin², Masao Yoshioka² (1.Graduate school of Science and Technology Kumamoto Univ., 2.Kumamoto Univ.)

Keywords:amorphous silicon,hydrogen

Currently, electrical energy is indispensable thing in our lives. Recently, impossible on the environment due to generation or exhaustion of fossil fuel resources have come to be a problem. Against this background, negative impact on the environment is small, attention has been focused on natural energy available indefinitely. However, the efficient use of natural energy, challenges still exist. It is one of the power generation using natural such sunlight power generation, the problem to be solved is present. There is an amorphous silicon as a material of the solar cell. Production cost is less expensive than monocrystalline silicon and polycrystalline silicon this material, there is a problem of the conversion efficiency into electric energy is low. Causes the conversion efficiency of the a-Si is low, the presence of crystal defects called dangling bonds in the crystal is increased. By coupling the H⁺ in the dangling bonds, it is possible to reduce the localized states of dangling bonds to generate (a-Si: H). As a result, the efficiency of the solar cell to achieve the production of solar cells with high efficiency at low cost can be expected. In this study, by the addition of H⁺ by Ion Beam Assist method, aiming at completion of the dangling bonds of all.