[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-4] Mapping of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink (2)

〇Masato Shingo¹, Takafumi Ito¹, Yukiyasu Kashiwagi², Tasuku Shigemune³, Atsushi Koizumi³, Takanori Kojima³, Masashi Saitoh², Kimihiro Matsukawa², Yasufumi Fujiwara³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Munic. Tech. Res. Inst., 3.Osaka Univ.)

Keywords:scanning internal photoemission microscopy,Ag nanoink,Schottky contact

We demonstrated scanning internal photoemission microscopy (SIPM) to characterize printed Ag electrodes in an initial stage of electrode formation. When Ag nano-ink was printed once, the ink dispersed into isolated small portions. When the printing was conducted more than three times, the small portions were connected each other. SIPM was clearly visualized such Ag/n-GaN interface.