[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-5] Mapping of ICP-etching induced damages on GaN surfaces using scanning internal photoemission microscopy

〇Hiroyoshi Imadate¹, Akihisa Terano¹, Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:scanning internal photoemission microscopy,etching,n-GaN

We characterized ICP etching induced damages on n-GaN surfaces by scanning internal photoemission microscopy. The etching pattern was clearly visualized as a photo yield map. The induced damages were recovered upon annealing at 700 ^oC. We conformed that this technic can sensitively detect such surface damages.