[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-6] Optical properties of plasma-induced defects in GaN from photocapacitance

Rikito Orimo¹, Kenta Onishi¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

Keywords:photocapacitance,photoionization cross section