[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-7] Impact of deep-level traps on depth profiling of homoepitaxial lightly-doped n-type GaN

〇Jun Suda¹, Masahiro Horita¹, Takuya Maeda², Naoki Sawada¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Faculty of Eng., Kyoto Univ.)

Keywords:GaN,vertical power devices,deep level

Depth profiling of net donor concentration based on a capacitance-voltage measurement is widely used. We investigated lightly-doped n-GaN which is grown for GaN vertical power devices in detail and found that an effect of deep-level traps should be considered to obtain true depth profile.