[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-8] Wafer mapping of deep level trap concentration in homoepitaxial n-type GaN by capacitance transient measurement

〇Masahiro Horita¹, Tetsuo Narita², Tetsu Kachi², Tsutomu Uesugi², Jun Suda¹ (1.Kyoto Univ., 2.Toyota Central R&D Labs.)

Keywords:gallium nitride,deep level,wafer mapping

We investigated wafer mapping of electron trap density for a quarter wafer of homoepitaxially grown n-type GaN by transient capacitance (C-t) measurement with general capacitance meters (sampling time: ~10 ms). Relationships between the properties in a GaN wafer can be evaluated rapidly by combining this method with the capacitance-voltage and current-voltage measurements.