[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-9] Deep level transient spectroscopy of low–carrier concentration n-GaN layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Takeshi Tanaka^1,2, Tomoyoshi Mishima³, Yutaka Tokuda⁴ (1.Univ. of Fukui, 2.SCIOCS Ltd., 3.Hosei Univ., 4.Aichi Inst. Tech.)

Keywords:GaN,DLTS,Schottky contact

DLTS measurements were conducted for low Si and C doped n-Gann Schottky contacts. For the low-C-doped samples, conventional defects od E1 and E3 were detected. However, for high-C-doped samples, no defects were detected. This change was consistent with site change of C atoms. By controlling C-doping level, defect formation was suppressed.