[21p-H103-1~21] 6.4 Thin films and New materials

[21p-H103-9] Properties of In-Ga-O semiconductor thin film deposited by sputtering with H₂O introduction

〇Eiichiro Nishimura¹, Toshio Morimoto¹, Tokuyuki Nakayama¹, Fumihiko Matsumura¹, Mana Shiraki¹, Kousaku Shimizu², Yuhki Ohno², Satoru Tanaka² (1.SUMITOMO METAL MINING CO., LTD., 2.Nihon University)

Keywords:semiconductor,sputtering

We are conducting research on high mobility oxide semiconductor IGO (In-Ga-O). This time, we examined the influence of deposition by sputtering with H2O introduction on semiconductor properties of IGO.
Hall mobility of IGO thin film deposited by sputtering with H2O introduction was more than 20cm²V^-1s^-1.