[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-13] I-V Characteristics and Structural Properties of TiO_2-δ Thin Film Prepared by Sputtering Using Oxygen Radical

〇(M1)Kinya Kawamura¹, Higuchi Tohru¹, Suzuki Naoya¹, Tsuchiya Takashi¹, Kobayashi Masaki², Kumigashira Hiroshi², Terabe Kazuya³ (1.Tokyo Univ. of Sci., 2.PF, KEK, 3.NIMS)

Keywords:TiO2-d thin film,Oxygen radical,ReRAM

We have prepared the anatase TiO2-d thin film with oxygen vacncies by RF magnetron sputtering using oxygen radical and Ti-metal. The TiO2-d thin film exhibited the mixed valence states of Ti4+/Ti3+. The electrical conductivity and electronic strcuture correspond to the n-type semiconductor. The Pt/TiO2-d/Pt thin film with cross point structure exhibited the I-V charactrics correspoding the Schottky-barrier diode.