The 63rd JSAP Spring Meeting, 2016

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Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P10 (Gymnasium)

1:30 PM - 3:30 PM

[21p-P10-11] Leakage current conduction mechanism at directly bonded Si/6H-SiC interface

〇Daiki Sodeoka1, Hiroyuki Kinoshita1, Hidetoshi Ishida1, Masahiro Yoshimoto1 (1.Kyoto Inst. of Tech.)

Keywords:wafer bonding