[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-21] Simulation of High-Field Electron Transport in 4H-SiC with Full-Band Monte Carlo Method

〇Ryusei Fujita¹, Kousuke Konaga¹, Takao Kotani², Yosinari Kamakura¹, Nobuya Mori¹ (1.Osaka Univ, 2.Tottori Univ)

Keywords:semiconductor,SiC,Monte Carlo Method