[21p-P17-1~26] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[21p-P17-26] Second Research Prototype of Schottky Diode for Energy Harvesting

〇Akihira Miyachi¹, Makoto Matsunoshita¹, Ryoko Kishikawa^2,3, Satoshi Yoshida⁴, Makoto Kasu⁵, Masahiro Horibe³, Kenjiro Nishikawa⁴, Iwamuro Mitsunori⁶, Shigeo Kawasaki^1,2 (1.ISAS,JAXA, 2.Sokendai, 3.AIST, 4.Kagosima Univ, 5.Saga Univ, 6.Hitachi Chem. Co.,Ltd.)

Keywords:Schottky barrier diode,Thermal diffusion

We research and develop the HySIC((Hybrid Semiconductor Integrated Circuit) using CMOS device with RF switch and turning circuit. For realizing CMOS devices, we studied a schottky barrier diode as a first step. In this study, We used high-resistivity silicon and boron sources in a thermal diffusion process.