[21p-P17-1~26] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[21p-P17-9] Electrical Characteristics of Al foil/Si junctions by surface activated bonding method

〇Katsuya Furuna¹, Jianbo Liang¹, Moeko Matsubara², Yoshitaka Nishio², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Toyo Aluminium K.K.)

Keywords:surface activated bonding method,Al foil,Si

表面活性化ボンディング法により作成したAl foil/p-Si接合の電気特性評価による厚膜電極実現可能性の検証。