[22a-S222-1~8] 21.1 Joint Session K

△ [22a-S222-7] Realization and Band Alignment in Ultra-wide Bandgap Amorphous Semiconductors a-Ga-Zn-O

〇Junghwan Kim¹, Takumi Sekiya¹, Keisuke Ide¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1.MSL, Tokyo Institute of Technology)

Keywords:Amorphous oxide semiconductor,Gallium oxide,Wide bandgap

It is very difficult to attain electronic conduction in wide bandgap materials, in particular for amorphous semiconductors. That is, the largest bandgap in oxide semiconductor is ~4.9 eV of crystalline b-Ga₂O₃ while electronic conduction has not yet been reported for pure amorphous Ga₂O₃.
In this work, we succeded in attaining electronic conduction for amorphous Ga₂O₃. More details will be presented at the conference.