[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

[22a-W541-4] Investigation of Thermal Oxidation Process in Low-defect Density GaN Substrate

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

Keywords:GaN,Thermal oxidation