The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Seiji Nakamura(TMU)

9:30 AM - 9:45 AM

[22a-W541-3] Current-Voltage Characteristics of TiN Electrodes on pGaN with Fe Layer Insertion

〇Yuta Ikeuchi1, Hitoshi Wakabayashi1, Kazuo Tsutsui1, Hiroshi Iwai1, Kuniyuki Kakushima1 (1.Tokyo Tech.IGSSE)

Keywords:semiconductor,GaN